Abstract
Two group IV precursors, titanium(IV) neo-pentoxide, [Ti(μ-ONep)(ONep) 3 ] 2 (1, where ONep = OCH 2 C(CH 3 ) 3 ), and zirconium(IV) neo-pentoxide, [Zr(μ-ONep)(ONep) 3 ] 2 (2), were found to possess relatively high volatility at low temperatures. These compounds were therefore investigated as metal-organic CVD (MOCVD) precursors using a lamp-heated cold-wall CVD reactor by direct vaporization without a carrier gas. The ONep derivatives proved to be competitive precursors for the production of thin films of the appropriate MO 2 (M = Ti or Zr) materials in comparison to other metallo-organic precursors. Compound 1 was found to vaporize at 120 °C with a deposition rate of -0.350 μm/min onto a substrate at 330 °C forming the anatase phase with <1 % residual C found in the final film. Compound 2 was found to vaporize at 160 °C and deposited a crystalline material at 300 °C with <1 % residual C found in the final film. A comparison with standard alkoxide and β-diketonates is presented where appropriate.
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