ChemInform Abstract: Investigation of Reactive‐Ion‐Etching‐Related Fluorocarbon Film Deposition Onto Silicon and a New Method for Surface Residue Removal.

Abstract

AbstractThe results of ion scattering/channeling and XPS measurements show clearly that the major CF4/H2 reactive ion etching (RIE) induced modifications of the Si near‐surface regions are the following: 1) the presence of a ∼ 30Å thick C,F‐film, and 2) a disordered Si layer which contains ∼ 1‐2·1016 displaced Si atoms/cm2, the degree of disorder depending on the plasma exposure time.