Abstract
Thin oxide layers prepared on Si(001) by various chemical treatments have been investigated using X-ray photoelectron spectroscopy. The oxides are prepared by treatment with HCl, H 2SO 4 and HNO 3. The O 1s spectra consists of two peaks at 532.6 eV (low binding energy component, LBC) and 533.6 eV (high binding energy component, HBC) in all the cases. The LBC is assigned to a monatomic bridging oxygen, SiOSi and HBC to a monatomic non-bridging oxygen, SiO species. Conversion of SiO to SiOSi takes place on annealing the sample. The concentration of SiO species is low in the case of HCl oxide. In in situ prepared oxide, the O 1s is predominantly due to SiOSi.
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