Abstract
The reaction of double-domain Si(100)(2×1) surfaces exposed to low levels of C 2H 4 was studied using X-ray photoelectron spectroscopy and low energy electron diffraction (LEED). The C 1s spectra from these exposed Si surfaces could be separated into two components: the high binding energy component and the low binding energy component. The Si surfaces exposed at a sample temperature of 600 or 700°C showed a c(4×4) LEED pattern. These results suggest that either CH x or C–C bonds were present on the Si(100) surface in addition to SiC.
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