Abstract
In this article X-ray radiation sensitivity of ZnS thin film prepared by a chemical bath deposition technique has been reported. The films were prepared under 0.10, 0.15 and 0.20 molarity (M). Characterization reports show that the 0.20M film has the best quality than the other low molarity films. I-V characteristics of the films were studied under dark condition and observed that the film prepared at 0.20M has an electrical conductivity of 2.06×10−6 (Ωcm)−1 which is about 10 times greater than the other lower molarity films. Further, the I-V characteristic of this film has studied under UV and X-ray radiations. The current under X-ray radiation is found to be significantly higher than that under the UV radiation. At a fix bias voltage of 1.0V, the conductivity under UV radiation is found to be 3.26×10−6 (Ωcm)−1 whereas that under the X-ray is 4.13×10−5 (Ωcm)−1. The sensitivity under X-ray radiation is significantly greater than that under the UV radiation. This analysis suggests that the ZnS thin film which is used as a UV radiation sensor can also be used as a potential X-ray radiation sensor.
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