Chemically Deposited Antimony Sulfide Selenide Thin Film Photovoltaic Prototype Modules

Abstract

We present thin film antimony sulfide selenide prototype photovoltaic modules of area, seven cm2 and conversion efficiency (η) of 3.5%. The thin films of Sb2SxSe3-x (x, 0.8–1.6) of 120–180 nm in thickness were deposited on FTO/CdS(80 nm) substrates at 80°C from chemical bath containing potassium antimony tartrate, thioacetamide and sodium selenosulfate. Thin film of CdS of 80 nm in thickness was deposited from a chemical bath at 80°C during 65 min on fluorine-doped SnO2 (FTO). The solar cell structure FTO/CdS/Sb2SxSe3-x/C had colloidal graphite paint of area, 0.7 cm × 0.7 cm. This cell structure was heated at 300°C during 30 min in a nitrogen ambient to create a carbon-doped antimony chalcogenide layer. Silver paint was applied to the carbon electrode and on FTO around it. Prototype modules had seven series connected cells of one cm2 each with a total area of seven cm2. Solar cell with varying composition of Sb2SxSe3-x along its thickness had a η of 3.88% at an open circuit voltage (Voc) of 0.44 V and short circuit current density of 18.3 mA/cm2. Prototype modules lighted-up blue light emitting diodes at a power, 5–15 mW.