Abstract
Acid-catalyzed etherification of carbinol has been used in the design of an alkali-developable, highly sensitive negative resist. The resist consists of a carbinol compound, an acid generator, and a phenolic resin. The resist using diphenylcarbinol (DPC), m, p-cresol novolak resin, and diphenyliodonium triflate (DIT) shows the best lithographic performance in terms of sensitivity and resolution in the carbinol resists evaluated in this study. In the lightly exposed region (below 2.5 mJ/cm 2) bimolecular etherification of DPC occurs while in the heavily exposed region (above 10 mJ/cm 2) DPC reacts with novolak resin to form o-diphenylmethyl novolak resin. Therefore the solubility of the DPC resist film in alkaline developers decreases upon exposure to deep-UV radiation and subsequent heating. Line and space patterns of 0.3 μm are obtained using the DPC resist in conjunction with KrF excimer laser stepper.
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