Abstract
Fullerene resist films are prepared on hydrogen terminated silicon by spin coating for electron beam lithography of microelectronic devices. Dense line and space patterns are achieved at varying post application bake temperature between 75 and 125degC for 10 min., post exposure bake between 90 and 130degC for 1.5 to 9 min. and exposure dose between 120 and 300 pC/cm. The chemically amplified resist system shows high resolution and sensitivity, wide process latitude and etch durability.
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