Abstract

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

Highlights

  • Graphene research is a relatively young field whose growth accelerated with the successful graphene exfoliation from bulk graphite by Professor Andre Geim and Professor Kostya Novoselov in 2004 at the University of Manchester [1]

  • An in-depth review was conducted on the synthesis of graphene using chemical vapour deposition (CVD) methods and the main characterisation techniques to study the characteristics of the produced graphene (Raman, Scanning electron microscopy (SEM), Atomic force microscopy (AFM) and transmission electron microscopy (TEM))

  • The various factors affecting the quality of graphene film and its growth process were discussed, including the system total pressure, partial pressure of hydrogen and hydrocarbon species, growth temperature, source of power, etc

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Summary

Introduction

Graphene research is a relatively young field whose growth accelerated with the successful graphene exfoliation from bulk graphite by Professor Andre Geim and Professor Kostya Novoselov in 2004 at the University of Manchester [1]. Among all sp carbon allotropes, graphene exhibits the most remarkable properties It has a significant theoretical specific surface area (2630 m2/g) [3]. Techniques that are suitable for production, in addition to their possible applications, are limited to the following: mechanical exfoliation (fundamental studies and research), liquid-phase exfoliation (mass production, low electrical quality), sublimation of silicon carbide (SiC) (high cost) and chemical vapour deposition (CVD). Exfoliation energy comes via ultrasonic horn sonication; high shear forces are increasingly being used The yield of these processes is typically a few percent; centrifugation is used to obtain a significant fraction of monolayer and few-layer graphene flakes in the final suspension [7]. The main disadvantages of this method are its high cost, and it requires large amounts of Si for large-scale production Another method is CVD graphene using growth substrates and a hydrocarbon gas source. CVD is a relatively inexpensive method, which produces a large area and high-quality graphene

Chemical Vapour Deposition
Role of Hydrogen and Hydrocarbon
CVD Growth Substrates
Role of Substrate’s Pre-Treatment and Surface Morphology
CVD Method
Observation of Graphene Grain Boundaries
Raman Spectroscopy
Scanning Electron Microscopy
Atomic Force Microscopy
Applications of CVD Graphene
Electronics Applications
Biosensors and Flexible Wearable Devices
Energy Applications
Solar Cells
Batteries
Supercapacitors
Findings
Conclusions

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