Abstract
Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive research on the synthesis of (1) high quality and (2) low cost graphene. Hot-wall chemical vapour deposition (CVD) is one of the most competitive growth methods, but its long processing times are incompatible with production lines. Here we demonstrate the growth of high quality monolayer graphene using a technique that is 100 times faster than standard hot-wall CVD, resulting in 99% reduction in production costs. A thorough complementary study of Raman spectroscopy, atomic force microscopy, scanning electron microscopy and electrical magneto-transport measurements shows that our cold wall CVD-grown graphene is of comparable quality to that of natural graphene. Finally, we demonstrate the first transparent and flexible graphene capacitive touch-sensor that could enable the development of artificial skin for robots.
Highlights
Chemical vapour deposition (CVD) of monolayer graphene on copper[1,2] has emerged as one of the most competitive growth methods for securing the industrial exploitation of graphene, due to its compatibility with Si and roll-to-roll technologies.[3]
A way forward to increase the throughput and reduce the production cost is to grow graphene in a cold wall CVD system which heats selectively only the Cu foils
We demonstrate for the first time (1) high-throughput production, (2) ultra low cost and (3) high quality monolayer graphene grown on Cu foils by resistively heated stage cold-wall CVD
Summary
High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition Thomas H. For films grown at higher temperatures (1000oC, 1035oC) we observe the same transition from nanocrystalline graphite to graphene islands as for growths at 950oC shown, but at a faster rate. When we grow graphene islands which are larger than the area probed by our Raman measurement (i.e. spot size of 5 μm diameter) we do not observe the presence of the D band as shown in figure S10d. The fitted linear gradient is representative of the film resistivity which we estimate to be 1.3K / , whereas the y intercept of the linear fit is the sum of the contact resistance for the two contacts, estimated to be 68 for each contact
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