Chemical vapor deposition using lanthanide β-diketone chelates with difluorodichloromethane

Abstract

Preparation of lanthanide fluoride and chloride films has been studied by chemical vapor deposition (CVD) using Ln(thd)3 (Ln=lanthanide(III); thd=2,2,6,6-tetramethyl-3,5-heptanedionato ligand) and Y(thd)3 with gas mixture systems of CF2Cl2 (difluorodichloromethane)/O2 and CF2Cl2/H2. Two kinds of fluorides, LnOF oxyfluoride and LnF3 triffluoride, were obtained separately along a CVD tube at atmospheric pressure and temperature as low as 300–600°C by the reaction of Ln(thd)3 chelates with CF2Cl2/O2 gas system. The chemical characteristics of the CVD products were considered from the thermochemical point of view.