Abstract
Preparation of thin film deposits of lanthanide, thorium and uranium oxides has been studied by chemical vapor deposition (CVD) method using β-diketonate metal chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and some reactant gases as starting materials. The deposition process was carried out using a special apparatus designed for the CVD method at atmospheric pressure and temperatures as low as 400–600°C.As a result, it was demonstrated that each chelate used was well suited for the above purpose by its high volatility and reactivity with the reactant, especially with water vapor.
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