Abstract
A new technique to produce a manganese-doped zinc-sulfide (ZnS) electroluminescent (EL) film has been developed using a low-pressure chemical vapor deposition system. The Mn 2+ ions are doped in the ZnS layer by controlling the flow rate of the hydrogen-chloride (HCl) carrier gas. Undoped ZnS films show 〈111〉-oriented cubic structure, whereas the Mn-doped ZnS films have hexagonal structure with 〈00·1〉 preferred orientation. The crystal structure changes from cubic to hexagonal with incorporation of the Mn-dopant. The single crystal layers are epitaxially grown on a silicon substrate at 500°C. A strong blue-light emission originating from a self-activated center is observed in the photoluminescence spectra. This blue band, however, is rapidly quenched with increasing the Mn concentration. It is clarified that a competitive adsorption phenomenon between Zn-Cl 2 and Mn-Cl 2 species on the growing surface plays an important role in the growth process and the film characteristics. A high efficiency of 4 lm/W and a steep luminance-voltage curve with a saturation luminance exceeding 3500 cd/m 2 are obtained in a device with double insulator structure under 1 kHz excitation. The crystalline properties and luminescence characteristics are discussed in terms of the effect of the Mn-doping and the growth temperature.
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