Abstract
Three samples of inorganic/organic (ITO/ ZnS/ PEDOT: PSS) photodetector has been fabricated from p-type (PEDOT: PSS) and n-type Zinc sulfide (ZnS) film, on a patterned indium tin oxide (ITO) coated glass substrate. The ZnS film was deposited by the thermal evaporation method at different thickness (100,200and300) nm. The current-voltage (I–V) characteristics of the fabricated samples exhibit a typical rectifying behavior. The (ITO/ ZnS/ PEDOT: PSS) has a high photo current which is increased from 0.267 A to 0.416A with increasing of ZnS layer thickness from (100-300) nm while the dark current was 0.057 A, at thickness (100nm) and increased to 0.171A at thickness (300 nm).It was observed that the ITO/ZnS (100nm)/PEDOT: PSS photodetector show higher photo responsivity is 64.4 A/W at 320nm
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