Abstract
AbstractSiO2 and Si3N4 thin films have been deposited at a substrate temperature of 350° using a glow discharge electron beam irradiating perpendicular to the wafer surface. Deposition rates up to 1000 Å/min and 250 Å/min respectively have been obtained. Films deposited over 4 inch diameter silicon wafers show uniformity of 5 percent. The deposition conditions and film properties are discussed.
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