Chemical vapor deposition of SiC layers from a gas mixture of CH3SiCl3+H2(+Ar), and effects of the linear velocity and Ar addition

Abstract

SiC polycrystalline layers were deposited on a graphite substrate from a gas mixture of CH3SiCl3+H2(+Ar) at temperatures in the range of 800–1200 °C. The effects of the source gas flow rate (CH3SiCl3+H2), total pressure, linear velocity and Ar flux addition on the phase of the deposits were examined in some detail. The deposition of a single-phase of SiC was accelerated at a higher linear velocity by reducing the total pressure and by addition of Ar flux at atmospheric pressure. The effect of Ar addition on acceleration of the SiC deposition may be caused by an increasing linear velocity and ‘‘dilution effect’’ of reactant gases.