Abstract
Thick polycrystalline gallium nitride films were grown by a two-step chemical vapor deposition process using gallium metal and ammonium chloride as starting reagents, at deposition rates of up to 50 μm/h. The deposits were examined by scanning electron microscopy and photoluminescence (PL) spectroscopy. The results demonstrate that the proposed process can be used to grow high-quality, stoichiometric gallium nitride layers with a perfect crystal structure, as evidenced by the high intensity of the 380-nm exciton peak in the room-temperature PL spectra of the films and also by electron-microscopic examination.
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