Chemical vapor deposition of amorphous silicon carbide thin films on metal surfaces using monomethylsilane gas at low temperatures

Abstract

The low temperature chemical vapor deposition process of depositing silicon carbide on a metal surface, such as aluminum and stainless steel, was developed using monomethylsilane gas. In order to prepare the reactive substrate surface, two alternative methods were separately used. The first was the formation of a silicon interlayer containing silicon dimers. The other method was the argon plasma etching for producing dangling bonds. After the reactive surface preparation, the silicon carbide thin film was formed at room temperature using monomethylsilane gas. Because the silicon–carbon bond remained after the deposition, the silicon carbide coating technology is expected to be applicable for various metals.