Abstract
It is shown that the construction of concentration dependences of equal etching rates, surface roughness, degree of surface contamination with etchant components and reaction products, deviation from stoichiometry of the surface layers (so-called Gibbs diagrams in the case of the ternary systems) for different semiconductor compounds and based on its solid solutions give the possibility to determine the etckant composition with necessary properties. The comparison of obtained Gibbs diagrams for undoped and doped semiconductors as well as for solid solutions with difforent compositions allow to define the influence of doping or solid solution composition on the main peculiarities of the chemical treatment. Taking into account a big experience in the field of the chemical treatment oj the 1/- VI and III- V semiconductor compounds some problems which must be resolve in the future are lay down.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
