Abstract
Abstract N-type CdS0.9Se0.1, the II-VI ternary semiconducting materials, was studied for optimum synthesis conditions by using Cd(CH3COO)2·2H2O, CH4N2S and SeO2 as precursors and ethylene glycol as a solvent. Two separate methods were used to prepare powder precursors. The first method was a solution method applied to prepare selenium powder. NaBH4 was used as a reducing agent. The second method was a reflux method used to prepare CdS powder. The product powders were mixed homogenously with the atomic ratio of Cd: S: Se to 1: 0.9: 0.1. Then it was annealed at different temperatures and time under nitrogen atmosphere. It was found from XRD results that the sample annealed at 700 °C for 10 hours contained CdS0.9Se0.1 as a main phase. The TEM and SEM images show self-agglomeration from small spheres to large merged agglomerates when high annealing temperature and time were applied. The SAED patterns matched well with the XRD patterns. STEM-EDS images and XAS technique were used to observe the existence of Se and oxidation state.
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