Abstract
The preparing technique of chemical solution deposition (CSD) for La 0.85Ag 0.15MnO 3 and La 0.85Ag 0.1MnO 3 colossal magnetoresistance (CMR) film is investigated. Polycrystalline-like La 0.85Ag 0.15MnO 3 films are obtained on LaAlO 3 ( h 0 0) and YSZ ( h 0 0) single-crystal substrates as a seed layer is not utilized. However, as a seed layer is used, an epitaxial-like La 0.85Ag 0.1MnO 3 film can be successfully fabricated on LaAlO 3 ( h 0 0) single-crystal substrate. XRD shows that Ag atoms can substitute La atoms without forming any second phases. The magneto-transport property measurement shows that the polycrystalline-like La 0.85Ag 0.15MnO 3 and the epitaxial-like La 0.85Ag 0.10MnO 3 films behave as CMR effect in the whole temperature region below metal–insulator transition ( T p) and in the vicinity of T p, respectively. The results indicate that the CSD method is a worthwhile technique for preparing manganite CMR films with tuning grain orientations.
Published Version
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