Abstract
Magnesium oxide thin films have been deposited on glass substrate using simple chemical solution technique. Film thickness was varied (171, 238, and 506nm) by controlling the deposition time. The electrical behaviour of MgO films showed leakage current density below 10-7 A/cm2 for voltage range from -10V to 10V. Resistivity value of the film was found to be increased due to the large grain boundary produced in the film. The formation of island like structure was detected at film thickness of 506nm which composed of nanoparticle MgO. The 238nm film was found to be suitable thickness of dielectric layer due it electrical properties and structural properties which include resistivity, leakage current density, roughness and particle size respectively.
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