Abstract
A chemical reaction analysis of the selenization of copper indium layers to form copper indium diselenide is presented. Time-progressive selenization reactions were carried out in a laminar flow tubular reactor in a dilute H2Se atmosphere at 400°C. Copper, indium and copper-indium thin films were reacted for 1–60 min. The reacted films are analyzed by x-ray diffraction and atomic absorption spectrophotometry to identify the chemical species present in the reacted films. A reaction network for film formation is proposed and data from time-progressive selenizations were analyzed to obtain species composition profiles. Rate expressions are postulated and a mathematical model for the selenization is developed. The behavior of the model is compared with the experimentally determined species compositions to obtain specific reaction rate constants.
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