Abstract
Electrical transport properties of intramolecular p–n–p junctions formed on individual semiconducting carbon nanotubes are reported. Chemical dopant “profiling” along the length of a nanotube divides the nanotube into two p-doped sections and a central n-doped section. The double p–n junctions formed on the nanotube dictate the electrical characteristics of the system. Well-defined and highly reproducible single-electron transistors with much smaller size than the geometrical length of the nanotube are obtained.
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