Abstract
The chemical stability of Si(111), terminated with bilayer AlSe and GaSe, upon exposure to atmosphere, N2 and O2, was investigated with core-level and valence band photoelectron spectroscopy. Si(111):GaSe and Si(111):AlSe both form stable, unreconstructed surfaces with no states in the silicon energy gap; their atomic structures are nearly identical. However, similarities in surface electronic and atomic structure do not imply similar chemical passivity. While Si(111):GaSe is largely unaffected by the exposures, Si(111):AlSe reacts irreversibly with both pure O2 and atmosphere, removing over 13 of the Se and permanently destroying long-range order.
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