Chemical Mechanical Polishing for Monocrystal SiC Assisted by the Heterogeneous Sono-Fenton Oxidation

Abstract

The efficient chemical mechanical polishing (CMP) ability of monocrystal SiC determines the development of advanced semiconductor device. In order to improve the ultra-precision polishing efficiency for SiC, a CMP method based on the heterogeneous sono-Fenton oxidation was proposed. The effects of heterogeneous sono-Fenton on SiC surface softening and polishing based on hydroxyl radical oxidation were studied by means of the corrosion and CMP experiments. Utilizing the indentation tester, the ultra depth of field microscope and optical profilometer, the synergistic effects of heterogeneous sono-Fenton method on the improvement of SiC surface softening and polishing performance were revealed. The research results showed that the change rates of SiC hardness and elastic modulus after heterogeneous sono-Fenton corrosion were the highest, which were 0.12 and 0.6, respectively. The depth variation of indentation on SiC after heterogeneous sono-Fenton corrosion was the highest, which was 1.741 μm. Correspondingly, the improvement degree of SiC surface quality after polishing based on the heterogeneous sono-Fenton corrosion was the greatest and the material removal rate was the highest, which were Sa2.94 nm and 0.469 μm h−1, respectively.