Abstract

We combine chemical lattice imaging with digital pattern recognition to map, at near-atomic resolution, the compositional change across GaAs/AlGaAs interfaces of the highest optical quality. These maps quantify the information content of each unit cell of the lattice image. Our results show that state-of-the-art GaAs/AlGaAs interfaces contain substantial atomic roughness on scales finer than suggested by optical measurements.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call