Abstract
ABSTRACTIt is now common to claim the fabrication of heterointerfaces, which are atomically flat over distances in the micron range. However, when chemical lattice imaging and digital pattern recognition are combined to examine quantitatively individual semiconductor heterointerfaces of the highest quality, substantial atomic scale roughness is observed. In this paper we review the application of chemical imaging and pattern recogntion techniques to the characterisation of heterointerfaces at near-atomic resolution, and discuss the possible ways the results can be combined with optical measurements to give an overall picture of interfacial roughness.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
