Abstract
We have studied the chemical dissolution of InAs, InSb, GaAs, and GaSb crystals in (NH4)2Cr2O7–HBr–C6H8O7 solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, and the kinetics of the chemical interaction of the semiconductors with solutions have been investigated in detail. The dissolution rate has been shown to be diffusion-limited. Citric acid helps to reduce the etch rate and improves the polishing performance of the etching solutions.
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