Abstract
ABSTRACTWe have applied high resolution chemical imaging in a transmission electron microscope to study compositional variations across InGaAs/InAIAs double quantum well structures. The structures of interest are grown on an InP substrate and consist of two 40 Å layers of InGaAs separated by 20 Å of InAlAs. For this (InGa)x(InAl)1-xAs system, we have been able to obtain compositional information with an accuracy of about 20 % and a maximum spatial resolution of 1/2 × 1/2 unit cell. The results clearly show irregularities on a monatomic scale.
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