Abstract
Recently, quantum wells (QW) have been constructed using the (In0.532Ga0.468)As/ (In0.522Al0.478)As system (hereafter InGaAs/In Al As), which is lattice matched to InP (lattice constant of 5.869Å). In order to understand the properties of such QWs, it is important to have knowledge of the structure and composition of interfaces. For III-V materials, compositional changes affect the <200> frequency component of the high resolution electron microscopy (HREM) image intensity (I200). This underlies the “chemical imaging” approach. Simulations for InGaAs/InAlAs interfaces suggest optimum conditions of microscope defocus df=-50nm and sample thickness t=14nm in the <100> orientation. A double-QW structure, consisting of InGaAs/ InAlAs/ InGaAs layers with nominal thicknesses of 4nm/ 2nm/ 4nm (respectively), and embedded in InAlAs layers, has been studied. All the layers were grown by molecular beam epitaxy at 500°C on a <100> InP substrate, with 60s growth interrupts between layers in the QW region.
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