Abstract
Analysis of thermal emission activity of silicon oxides with respect to oxygen showed that electronically excited molecules of singlet oxygen make up the main fraction in the gas samples. The negative linear correlation between the specific activity and specific surface area of the samples points to volume localization of labile structural fragments. High-resolution vibrational and electronic spectroscopy revealed isolated Si-O oscillators, dimeric and trimeric oxygen associates, as well as Si-Si bonds in the ground and electronically excited states in the structure of isolated oscillators. Calculation and published data gave evidence for the possibility of dark initiation of redox transformations accompanied by formation of excited states.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call