Chemical equilibrium analysis of silicon carbide oxidation in oxygen and air

Abstract

AbstractDue to their refractory nature and oxidation resistance, Ultra‐High Temperature Ceramic materials, including silicon carbide, are of interest in hypersonic aerospace applications. To analyze the thermodynamic behavior of silicon carbide during transition between passive and active oxidation states, chemical equilibrium calculations are performed. The predicted oxygen pressures for passive‐to‐active transition show improved agreement up to an order of magnitude with experimental transition data in the literature, compared with Wagner's model. Both oxygen and air environments are examined, and a 3% difference in transition temperature is observed. Material response analysis demonstrates that a surface temperature jump occurs during thermal oxidation of silicon carbide, corresponding to passive‐to‐active transition.