Abstract
Copper indium diselenide (CISe) thin films were chemically deposited using modified chemical bath deposition (M-CBD) from solutions of (CuSO 4 + In 2(SO 4) 3) and Na 2SeSO 3 as cationic and anionic sources, respectively. M-CBD is based on the immersion of the substrate into separately placed cationic and anionic precursors. Attempt was made to prepare the CISe films at room temperature. The films were characterized for their structural, morphological, compositional and electrical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Rutherford back scattering (RBS) and electrical measurement techniques.
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