Abstract
The chemical composition fluctuations of InGaN nanowires are studied by a combination of Energy Dispersive X-ray spectroscopy and photoluminescence spectroscopy. It is demonstrated that these fluctuations are linked to the elastic strain relaxation mechanism affecting InGaN sections grown on GaN nanowires. It is further shown that the elastic strain relaxation mechanism depends itself on the growth conditions, in particular on the effective metal/active nitrogen flux ratio. As a consequence of the presence of chemical composition fluctuations, wide photoluminescence spectra are observed, associated with a marked carrier localization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
