Abstract
Several aspects of the growth of InP by chemical beam epitaxy, using triethyl-indium and phosphine sources, have been investigated: growth rate, carbon incorporation, Si and Be doping, and substrate misorientation effects. High purity layers could be grown, with 77 K mobilities as high as 112,000 cm 2/V·s. An electrical activity of only 25% was measured for Be in InP. A comparison of two substrate misorientations, off (001) towards (111)A or (111)B plane, shows that the latter misorientation resulted in poorer epilayer quality.
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