Abstract
InGaAs was successfully grown on GaAs(100) substrate by chemical beam epitaxy (CBE) using triethylgallium (TEGa), trimethylindium (TMIn) and unprecracked monoethylarsine (MEAs) as a substitute for arsine. Indium composition of grown layers using unprecracked MEAs is found to be insensitive to the growth temperature of 410 to 590°C unlike that of metalorganic molecular beam epitaxy (MOMBE). Around 460°C, the type conversion of free carrier from n- to p-type was observed as the growth temperature was increased, presumably due to the different bonding energies between GaC and AsC. These results show that the use of unprecracked MEAs in the growth of InGaAs produces a wide growth window for indium composition and low impurity concentrations compared to the use of precracked arsine.
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