Abstract
InGaAs was successfully grown on GaAs(100) substrate by chemical beam epitaxy (CBE) using triethylgallium (TEGa), trimethylindium (TMIn) and unprecracked monoethylarsine (MEAs) as a substitute for arsine. Indium composition of grown layers using unprecracked MEAs is found to be insensitive to the growth temperature of 410 to 590°C unlike that of metalorganic molecular beam epitaxy (MOMBE). Around 460°C, the type conversion of free carrier from n- to p-type was observed as the growth temperature was increased, presumably due to the different bonding energies between GaC and AsC. These results show that the use of unprecracked MEAs in the growth of InGaAs produces a wide growth window for indium composition and low impurity concentrations compared to the use of precracked arsine.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.