Abstract
In this work the effects of growth temperature on the growth of gallium indium phosphide (GaInP) by the chemical beam epitaxy technique are reported. Triisopropylgallium, ethyldimethylindium and tertiarybutyl-phosphine were used as the gallium, indium and phosphorus sources, respectively. The growth rate, surface morphology, low temperature (15 K) and room temperature (300 K) photolumine-scence (PL) were studied as functions of the growth temperature. The optimum growth temperature was found to be 520°C where the PL spectra show only a single strong and narrow band edge peak.
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