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Abstract
We report a study on surface morphology and optical properties of GaAsN epilayers grown on GaAs (1 0 0) vicinal substrates by metalorganic vapor-phase epitaxy (MOVPE), using dimethylhydrazine as the N source. The surface morphology was investigated by atomic force microscopy (AFM) as a function of N composition and growth temperature ( T g). At T g=530–550°C, we observed a transition from a bunched step/terrace structure towards a surface with indistinct step/terrace structure when increasing the N content. We attribute this evolution to a transition from step-bunching towards 2D-nucleation growth, related to decreased Ga surface-diffusion length. The optical properties were studied using room-temperature (RT) and low-temperature photoluminescence (PL), and photoreflectance (PR). Post-growth thermal annealing were carried out on GaAs-capped layers. A drastic increase of the RT PL intensity and a narrowing of the linewidth were observed under optimum annealing conditions. The influence of annealing temperature and duration were also examined.
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