Abstract
ABSTRACT A chemical beam deposition (CBD) technique has been developed for the fabrication of mutticomponent oxide films. The method utilizes chemical (molecular) beams of metalorganic precursors (solid and liquid) in an ultrahigh vacuum environment. Pyrolysis reactions of the metalorganics at the substrate surface are facilitated by the presence of active oxygen from an ozone source. The method has been successfully employed to grow ferroelectric lead titanate, PbTiO3, thin films on MgO (100) substrates. Fine grained, oriented, polycrystalline PbTiO3 films have been deposited at substrate temperatures as low as 350°C. Films were characterized by XRD, SEM and TEM analyses. The results suggest that CBD offers an additional method for the fabrication and integration of ferroelectric thin films with silicon (or GaAs) devices.
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