Abstract
The incorporation of manganese into a 3 nm ruthenium thin-film is presented as a potential mechanism to improve its performance as a copper diffusion barrier. Manganese (∼1 nm) was deposited on an atomic layer deposited Ru film, and the Mn/Ru/SiO2 structure was subsequently thermally annealed. X-ray photoelectron spectroscopy studies reveal the chemical interaction of Mn with the SiO2 substrate to form manganese-silicate (MnSiO3), implying the migration of the metal through the Ru film. Electron energy loss spectroscopy line profile measurements of the intensity of the Mn signal across the Ru film confirm the presence of Mn at the Ru/SiO2 interface.
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