Abstract
The chemical interaction of Al and Mn deposited on Ru thin films for use as copper diffusion barrier layers are assessed in-situ using x-ray photoelectron spectroscopy (XPS). Thin (∼1–2 nm) Al and Mn films were separately deposited on 3 nm Ru liner layers on SiO 2 , and both Al/Ru/SiO 2 and Mn/Ru/SiO 2 structures were subsequently thermally annealed. Results indicate the diffusion of both metals through the Ru thin films and the subsequent chemical interaction with the underlying SiO 2 substrate to form Al 2 O 3 and MnSiO 3 . In both cases, the reduction of SiO 2 leads to the release of Si from the dielectric and the upward diffusion of Si into the Ru liner layers.
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