Abstract
From Photoelectron Spectroscopy (XPS) of a-SiGe:H a statistical distribution of Si and Ge is derived. Since oxidation of film surface does not exceed 5 nm, and thus in the bulk no oxygen related matrix effects can be expected, the amount of hydrogen bound to Si and Ge even for high concentrations has been evaluated quantitatively with Secondary Ion Mass Spectrometry (SIMS) by the detection and isotopic separation of elemental ions and SiH + and GeH +. Annealing of films proves no preferential detachment of hydrogen from Ge or Si.
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