Abstract
In this work, we study the chemical and physical properties of the interface between Al2O3 and GaAs for different surface treatments of GaAs. The interfacial layer between the high-κ layer and GaAs substrate was studied using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The reduction in native oxide layer was observed upon atomic layer deposition of Al2O3 on nontreated GaAs using trimethyl aluminum precursor. It was also observed that the sulfide treatment effectively mitigates the formation of the interfacial layer as compared to the surface hydroxylation using NH4OH. The electrical characteristics of GaAs capacitors further substantiate the XPS and TEM results.
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