Abstract
This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is attributed to charging of the deposit by the electron beam. The branching can be suppressed by introducing water into the chamber together with PMCPS. At the same time, the cointroduction of water results in a higher growth rate, which is found to be specific to PMCPS.
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