Abstract
The defect density measured by electron spin resonance (ESR) is increased by 50 times by light soaking, while that measured by the constant photocurrent method (CPM) is increased by only 4 times in n-doped a-Si:H. This large discrepancy between the CPM and ESR results is attributed to the presence of charged defects which are detected by the CPM but not by ESR. Light-induced ESR is thought to be able to detect the charged defects, but quantitative analysis is difficult because whether an increase or decrease of the neutral defect density is observed under illumination depends on the ratio of charged and neutral defect densities, light intensity and the cross-section for charge trapping.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
