Abstract
A large discrepancy between defect densities evaluated by constant photocurrent method (CPM) and electron spin resonance (ESR) is investigated for hydrogenated amorphous silicon (a-Si:H) with various thicknesses in the process of light soaking (LS). It is shown by a computer simulation that the inhomogeneous defect distribution across the film thickness caused by a rather small penetration depth of the white light in the thick film is one of the possible origins of the discrepancy. But various other causes should also bring about the discrepancy, and the problem is still a puzzling one.
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