Abstract
Abstract : Metal-oxide-silicon (MOS) capacitors were fabricated on silicon dioxide films produced at 700 C by either low pressure chemical vapor deposition (LPCVD) or high pressure thermal oxidation (HIPOX). The LPCVD process involved reaction of dichlorosilane with nitrous oxide. The HIPOX process involved dry oxygen. The LPCVD and HIPOX films were subjected to a variety of annealing treatments. We have systematically investigated the effects of these treatments by measurement of oxide charge and interface trap density before and after electron current transport across films, grown and annealed at 700 C, were comparable to those of standard dry thermal oxides grown and annealed at 1000 C. However, charge trapping in the HIPOX films was an order of magnitude larger than in the standard oxides, although well-prepared HIPOX films exhibited specific electron traps characteristics of standard dry oxides.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
