Abstract
An analysis of the charge trapping properties of multilayer dielectrics is important for an understanding of the physics of stacked dielectric films. Quantities of interest are the amount and the centroid of the trapped charge. In this work a new experimental setup is presented that allows the determination of these quantities. In addition, the method itself allows one to check its inherent premises. Its application to oxide/nitride/oxide triple layers reveals that the trapped charge centroid is positioned in the middle of the nitride layer with charge densities up to some 1013 e cm−2 in saturation. The relevance of charge trapping for defect-related breakdown events is pointed out.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
