Abstract
A hole-selective contact (HSC) composed of stacked layers of molybdenum oxide (MoOx) and copper oxide (CuOx), called MOCOSL, has been proposed as passivation booster for screen-printed monocrystalline silicon solar cell (SMSC) applications. The passivation quality of MOCOSL is investigated by characterizing its charge trapping properties, including fixed oxide charge (Qf) and interface trap density (Dit). The conversion efficiency (CE) of SMSCs is improved by MOCOSL, resulting in an increase from 20.66% to 21.76%. This improvement is attributed to an increase in the negative Qf and a decrease in Dit, which result in an increase in the open circuit voltage (Voc) and short circuit current (Jsc). Specifically, the number of negative Qf is increased by MOCOSL, which helps to reduce the recombination of charge carriers.
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